smd type features high breakdown voltage adoption of mbit process excellent h fe linearlity. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 5v collector current i c 200 ma collector current (pulse) i cp 400 ma collector power dissipation p c* 1.3 w jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on ceramic board (250 mm 2 x 0.8 mm) electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =300v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a collector-base breakdown voltage v (br)cbo i c =10ua,i e =0 400 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 400 v emitter-base breakdown voltage v (br)ebo i e =10ua,i c =0 5 v dc current gain h fe v ce =10v,i c =50ma 60 200 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.8 v base-emitter saturation voltage v be(sat) i c =50ma,i b =5ma 1 v gain-bandwidth product f t v ce =30v,i c =10ma 70 mhz collector output capacitance c ob v cb =30v,i e =0,f=1mhz 5 pf reverse transfer capacitance c re v cb =30v,i e =0,f=1mhz 4 pf turn-on time t on 0.25 turn-off time t off 5.0 s see test circuit. sales@twtysemi.com 1 of 3 http://www.twtysemi.com 2SC4548 product specification 4008-318-123
smd type electrical characteristics curves test circuit h fe classification marking rank d e h fe 60 120 100 200 cn sales@twtysemi.com 2 of 3 http://www.twtysemi.com 2SC4548 product specification 4008-318-123
smd type 2SC4548 sales@twtysemi.com 3 of 3 http://www.twtysemi.com smd type smd type smd type smd type smd type product specification 4008-318-123
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